| Property | Value |
|---|---|
| Atomic Density | 5 x 1022 cm-3 5 x 1028 m-3 |
| Atomic Weight | 28.09 |
| Density (ρ) | 2.328 g cm-3 2328 kg m-3 |
| Energy Bandgap (EG) | 1.1242 eV |
| Intrinsic Carrier Concentration (ni)* | 1 x 1010 cm-3 1 x 1016 m-3 |
| Intrinsic Carrier Concentration (ni) at 25°C* | 8.6 x 109 cm-3 8.6 x 1015 m-3 |
| Lattice Constant | 0.543095 nm |
| Melting Point | 1415 °C |
| Thermal Conductivity | 1.5 Wcm-1K-1 150 Wm-1K-1 |
| Thermal Expansion Coefficient | 2.6 x 10-6 K-1 |
| Effective Density of States in the Conduction Band (NC) | 3 x 1019 cm-3 3 x 1025 m-3 |
| Effective Density of States in the Conduction Band (NV) | 1 x 1019 cm-3 1 x 1025 m-3 |
| Relative Permittivity (er) | 11.7 |
| Electron Affinity | 4.05 eV |
| Electron Diffusion Coefficient (De) | kT/q µe |
| Hole Diffusion Coefficient (Dh) | kT/q µh |
* updated values given in Sproul '90 and Sproul '91.
Carrier mobility is a function of carrier type and doping level. The values calculated here use the same formula as PC1D to fit values given in Wang '90 and Thurber. Lifetime as a function of doping is given on bulk lifetime.